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page 1 ver: june 2001
thyristor tsp058c - tsp320c axial lead bi-directional thyristor surge protector device ? protects by limiting voltages and shunting surge currents away from sensitive circuits designed for telecommunications applications such as line cards, modems, pbx, fax, lan,vhdsl helps meet standards such as gr1089, itu k.20, iec950, ul1459&50, fcc part 68 low capacitance, high surge (a, b, c rating available), precise voltage limiting, long life

do-201ae r e b m u n t r a p e v i t i t e p e r d e t a r e t a t s - f f o k a e p e g a t l o v r e v o k a e r b e g a t l o v e t a t s - n o e g a t l o v e v i t i t e p e r e t a t s - f f o k a e p t n e r r u c r e v o k a e r b t n e r r u c g n i d l o h t e n r r u c e c n a t i c a p a c e t a t s - f f o v m 5 1 = c a v , z h m 1 = f ( rms ) . x a m . x a m . x a m . x a m . x a m . n i m . p y t . x a m . p y t . x a m v drm v bo i @ bo v t a 1 @ i drm i bo i h c o v 0 @ c d c o v 0 5 @ c d v v v a a m a m f p f p c 8 5 0 p s t 8 5 7 7 5 5 0 0 8 0 5 1 5 8 5 0 1 5 3 3 4 c 5 6 0 p s t5 68 85 5 0 0 80 5 10 81 0 14 30 4 c 5 7 0 p s t 5 7 8 9 5 5 0 0 8 0 5 1 8 7 5 9 0 3 7 3 c 0 9 0 p s t0 90 3 155 0 0 80 5 10 70 83 24 3 c 0 2 1 p s t 0 2 1 0 6 1 5 5 0 0 8 0 5 1 3 6 9 7 0 2 9 2 c 0 4 1 p s t0 4 10 8 155 0 0 80 5 11 68 79 18 2 c 0 6 1 p s t 0 6 1 0 2 2 5 5 0 0 8 0 5 1 8 5 5 7 9 1 7 2 c 0 9 1 p s t0 9 10 6 255 0 0 80 5 17 51 79 16 2 c 0 2 2 p s t 0 2 2 0 0 3 5 5 0 0 8 0 5 1 7 5 1 7 8 1 6 2 c 5 7 2 p s t5 7 20 5 355 0 0 80 5 16 50 78 15 2 c 0 2 3 p s t 0 2 3 0 0 4 5 5 0 0 8 0 5 1 6 5 0 7 7 1 4 2 s e t o n) 3 , 1 () 6 , 5 , 3 () 3 () 3 () 3 () 3 , 2 () 3 () 3 () 3 () 3 ( notes: 1. specific v drm values are available by request. 2. specific i h values are available by request. 3. all ratings and characteristics are at 25 c unless otherwise specified. 4. v drm applies for the life of the device. i drm will be in spec during and following operation of the device. 5. v bo1 is at 100v/msec, i sc =10a pk , v oc =1kv pk , 10/1000 waveform 6. v bo2 is at f = 60 hz, i sc = 1 a (rms) , vac = 1kv (rms) , r l = 1 k ? , 1/2 ac cycle
page 2 ver: june 2001
thyristor tsp058c - tsp320c
follow these steps to select the proper thyristor surge protector for your application: 1. define the operating parameters for the circuit: ambient operating temperature range maximum telephone line operating current (highest battery and shortest copper loop) maximum operating voltage: (maximum dc bias + peak ringing voltage) maximum surge current system voltage damage threshold select device with an off-state voltage rating (v drm ) above the maximum operating voltage at the minimum operating temperature. 3. select surge current ratings (i pps and i tsm ) those which the application must withstand. 4. verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of t he system. 5. verify that the maximum breakover voltage of the device is below the system damage threshold. 6. verify that the circuit's ambient operating temperatures are within the device's operating temperature range. 7. verify that the device's dimensions fit the application's space considerations. 8. independently evaluate and test the suitability and performance of the device in the application g n i t a r t n e r r u c e s l u p k a e p e v i t i t e p e r - n o n k a e p e v i t i t e p e r - n o n t n e r r u c e g r u s e t a t s - n o l o b m y s i pps i tsm e v a w t n e r r u c t i u c r i c - t r o h s0 1 / 2 s0 2 / 8 s0 6 1 / 0 1 s0 1 3 / 5 s0 6 5 / 0 1 s0 0 0 1 / 0 1 s a 0 6 e v a w e g a t l o v t i u c r i c - n e p o 0 1 / 2 s 0 5 / 2 . 1 s 0 6 1 / 0 1 s 0 0 7 / 0 1 s 0 6 5 / 0 1 s 0 0 0 1 / 0 1 s e u l a v a 0 0 5a 0 5 3a 0 0 2a 0 5 1a 5 2 1a 0 0 1 s e t o n ) 6 , 5 , 4 , 2 , 1 ( ) 4 , 3 , 2 , 1 (

notes: 1. thermal accumulation between successive surge tests is not allowed. 2. the device under test initially must be in thermal equilibrium with t j = 25 c. 3. test at 1 cycle, 60 hz. 4. surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated t j . nevertheless, devices will survive many surge applications without degradation. surge capability will not degrade over a device's typical operating life. 5. adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. the current wave is more important than the voltage wave for accurate surge evaluation. 6. the waveform is defined as a/b ms where: a: (virtual front time) = 1.25 x rise time = 1.25 x (t b - t a ) b (duration time to 50% level of ipps) = t 1 - t 0 0% 20% 40% 60% 80% 100% time % ipps tb ta t1 to
page 3 ver: june 2001
thyristor tsp058c - tsp320c g n i t a r l o b m y s e u l a v t i n u e g n a r e r u t a r e p m e t n o i t c n u j e g a r o t s t stg 0 5 1 o t 0 5 - o c e g n a r e r u t a r e p m e t n o i t c n u j g n i t a r e p ot j 0 5 1 o t 0 4 - o c e g n a r e r u t a r e p m e t t n e i b m a g n i t a r e p o t a 5 6 o t 0 4 - o c

c i t s i r e t c a r a h c l o b m y s e u l a v t i n u t s d a e l o t n o i t c n u j e c n a t s i s e r l a m r e h t l o t t n e c a j d a b a t n o . s e z i s d a p l a c i t n e d i o t d e r e d l o s s d a e l h t o b . c i t s a l p r l j 0 2 . x a m o w / c

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s r e t e m a r a p s n o i t i d n o c t s e t l o b m y s . n i m . x a m t i n u k a e p e v i t i t e p e r t n e r r u c e t a t s - f f o v d v d e t a r = drm i drm 5 a t n e r r u c r e v o k a e r b i , z h 0 6 = f sc v , s m r a 1 = c a r , s m r v k 1 = l k 1 = ? e l c y c c a 2 / 1 , i o b 0 0 8 a m 1 t n e r r u c g n i d l o h0 0 0 1 / 0 1 i , m r o f e v a w s c s v , a 0 1 = c o r , v 2 6 = l 0 0 4 = ? i h 0 5 1a m e g a t l o v e t a t s - n o i t 0 0 3 = w t , a 1 = e s l u p 1 , s v t 5 v notes: specific i h values are available by request.
page 4 ver: june 2001
thyristor tsp058c - tsp320c c i t s i r e t c a r a h c l o b m y s e u l a v v bo e g a t l o v r e v o k a e r b d e r u s a e m n w o d k a e r b t a r o n i e c i v e d e h t s s o r c a e g a t l o v m u m i x a m e s i r f o e t a r t n e r r u c d n a e g a t l o v d e i f i c e p s a r e d n u i bo t n e r r u c r e v o k a e r b v ( e g a t l o v r e v o k a e r b e h t t a g n i w o l f t n e r r u c s u o e n a t n a t s n i bo ) i h t n e r r u c g n i d l o h e t a t s - n o e h t n i e c i v e d e h t n i a t n i a m o t d e r i u q e r t n e r r u c m u m i n i m i t t n e r r u c e t a t s - n o n o i t i d n o c e t a t s - n o e h t n i e c i v e d e h t h g u o r h t t n e r r u c v t e g a t l o v e t a t s - n o d e i f i c e p s a t a n o i t i d n o c e t a t s - n o e h t n i e c i v e d e h t s s o r c a e g a t l o v ( t n e r r u ci t ) v drm e g a t l o v e t a t s - f f o k a e p e v i t i t e p e r d e t a r l l a g n i d u l c n i , e g a t l o v e t a t s - f f o e h t f o e u l a v s u o e n a t n a t s n i t s e h g i h e h t t n e i s n a r t e v i t i t e p e r n o n l l a g n i d u l c x e t u b s e g a t l o v t n e i s n a r t e v i t i t e p e r s e g a t l o v i drm t n e r r u c e t a t s - f f o k a e p e v i t i t e p e r n o i t a c i l p p a e h t m o r f s t l u s e r t a h t t n e r r u c f o e u l a v ) k a e p ( m u m i x a m e h t v f o drm i pps t n e r r u c e s l u p k a e p e v i t i t e p e r - n o n e d u t i l p m a d e i f i c e p s f o t n e r r u c e s l u p m i k a e p f o e u l a v m u m i x a m d e t a r e c i v e d e h t o t e g a m a d t u o h t i w d e i l p p a e b y a m t a h t e p a h s e v a w d n a t s e t r e d n u t d / i dt n e r r u c e t a t s - n o f o e s i r f o e t a r l a c i t i r c d n a t s h t i w n a c e c i v e d e h t t a h t t n e r r u c f o e s i r f o e t a r e h t f o e u l a v d e t a r . e g a m a d t u o h t i w t d / v d e g a t l o v e t a t s - f f o f o e s i r f o e t a r l a c i t i r c v w o l e b ( e g a t l o v f o e s i r f o e t a r m u m i x a m e h t drm e s u a c t o n l l i w t a h t ) . e t a t s - n o e h t o t e t a t s - f f o e h t m o r f g n i h c t i w s v bo v br v drm v t i pps i tsm i t i bo i h i br i drm _ v +v _ i +i
page 5 ver: june 2001
thyristor tsp058c - tsp320c
f = 1 mhz, v ac = 15 mv rms r e b m u n t r a p e c n a t i c a p a c e t a t s - f f o c o f p c d v 0 c d v 1 c d v 2 c d v 5 c d v 0 5 . p y t . x a m . p y t . x a m . p y t . x a m . p y t . x a m . p y t . x a m c 8 5 0 p s t 5 8 5 0 1 5 7 0 9 9 6 3 8 0 6 0 7 5 3 3 4 c 5 6 0 p s t0 81 0 11 76 85 69 76 56 64 30 4 c 5 7 0 p s t 8 7 5 9 5 6 0 8 9 5 3 7 0 5 0 6 0 3 7 3 c 0 9 0 p s t0 70 88 56 62 57 53 40 53 24 3 c 0 2 1 p s t 3 6 9 7 2 5 0 6 7 4 8 5 9 3 5 4 0 2 9 2 c 0 4 1 p s t1 68 70 58 55 46 56 34 49 18 2 c 0 6 1 p s t 8 5 5 7 8 4 6 5 3 4 3 5 4 3 3 4 9 1 7 2 c 0 9 1 p s t7 51 77 45 52 49 43 32 49 16 2 c 0 2 2 p s t 7 5 1 7 7 4 5 5 2 4 9 4 3 3 2 4 8 1 6 2 c 5 7 2 p s t6 50 76 45 52 49 42 32 48 15 2 c 0 2 3 p s t 6 5 0 7 6 4 5 5 1 4 9 4 2 3 2 4 7 1 4 2
do-201ae unit: inch ( mm ) .210 ( 5.3 ) .188 ( 4.8 ) .042 ( 1.07 ) .037 ( .94 ) 1.0 ( 25.4 ) min. 1.0 ( 25.4 ) min. .375 ( 9.5 ) .285 ( 7.2 ) case: jedec do-201ae molded plastic terminals: solder plated, solderable per mil-std-750, method 2026 polarity: bi-directional standard packaging: 52 mm tape weight: 0.04 ounce, 1.1 gram
page 6 ver: june 2001
thyristor tsp058c - tsp320c

r e b m u n t r a p e d o c g n i k r a m c 8 5 0 p s t c 8 5 0 p s t c 5 6 0 p s tc 5 6 0 p s t c 5 7 0 p s t c 5 7 0 p s t c 0 9 0 p s tc 0 9 0 p s t c 0 2 1 p s t c 0 2 1 p s t c 0 4 1 p s tc 0 4 1 p s t c 0 6 1 p s t c 0 6 1 p s t c 0 9 1 p s tc 0 9 1 p s t c 0 2 2 p s t c 0 2 2 p s t c 5 7 2 p s tc 5 7 2 p s t c 0 2 3 p s t c 0 2 3 p s t

e c i v e d g n i k c a p y t ' q r e d r o . n i m s a r e d r o k r a m e r c x x x p s t l e e r & e p a t " 3 1 s c p 0 0 0 , 4 c x x x p s t g n i k c a p d r a d n a t s k l u bs c p 0 0 0 , 1b - c x x x p s t n o i t i n u m m a s c p 0 0 0 , 3 b / t - c x x x p s t marking code panjit logo last digit of calendar year y 1st line: 2nd line: weekly ww production line p pec t s p p 0 5 8 c y w w w p p e c
page 7 ver: june 2001
thyristor tsp058c - tsp320c ? copyright panjit international inc. 2001 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. panjit internatioal inc. http://www.panjit.com.tw email: sales@panjit.com.tw typical capacitance v.s. off-state voltage f=1 m hz v =15mv ac drms t=25 c j o 0.1 1 10 100 10 20 30 40 50 60 70 capacitance (pf) v off-state voltage (v) d tsp075sc tsp120sc tsp140sc tsp190sc typical capacitance v.s. rated repetitive off-state voltage f=1 m hz v =0voltsdc d t=25 c j o v =15mv ac drms 50 100 150 200 250 300 350 20 30 40 50 60 70 80 90 cseriesdevice bseriesdevice aseriesdevice capacitance (pf) v (v) drm 0 20 40 60 80 100 120 140 0.01 0.1 1 10 100 150 0.001 0.0001 i off-state current ( a) d, t(c) j o typical off-state current v.s junction temperature tsp220sb tsp220sb tsp220sc

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